Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices

ABSTRACT

A method of forming a semiconductor structure that includes a tensily strained silicon fin extending upwards from a first portion of a substrate and in an nFET device region, and a SiGe fin structure extending upwards from a second portion of the substrate and in a pFET device region. In accordance with the present application, the SiGe fin structure comprises, from bottom to top, a lower SiGe fin that is relaxed and an upper SiGe fin, wherein the upper SiGe fin is compressively strained and has a germanium content that is greater than a germanium content of the lower SiGe fin.

BACKGROUND

The present application relates to semiconductor technology and moreparticularly to a method of forming tensily strained silicon fins in annFET device region and compressively strained silicon germanium alloy(SiGe) fins in a pFET device region. The present application alsorelates to a semiconductor structure containing tensily strained siliconfins in an nFET device region and compressively strained silicongermanium alloy (SiGe) fins in a pFET device region.

For more than three decades, the continued miniaturization of metaloxide semiconductor field effect transistors (MOSFETs) has driven theworldwide semiconductor industry. Various showstoppers to continuescaling have been predicated for decades, but a history of innovationhas sustained Moore's Law in spite of many challenges. However, thereare growing signs today that MOSFETs are beginning to reach theirtraditional scaling limits. Since it has become increasingly difficultto improve MOSFETs and therefore complementary metal oxide semiconductor(CMOS) performance through continued scaling, further methods forimproving performance in addition to scaling have become critical.

The use of non-planar semiconductor devices such as, for example,semiconductor fin field effect transistors (FinFETs) is the next step inthe evolution of complementary metal oxide semiconductor (CMOS) devices.Semiconductor FinFETs can achieve higher drive currents withincreasingly smaller dimensions as compared to conventional planar FETs.

For FinFET performance increase, a strained channel material is needed.For CMOS devices, tensile strained silicon fins are beneficial for nFETdevices, but not for pFET devices. Therefore, there is a need to releasetensile strain in the pFET fins and also to add compressive strain tothe pFET fins for further device performance enhancement.

SUMMARY

The present application provides a method to maintain strain in an nFETdevice region of a strained silicon-on-insulator (SSOI) substrate, whileforming compressively strained silicon germanium alloy (SiGe) fins in apFET device region.

In one aspect of the present application, a method of forming asemiconductor structure is provided. In one embodiment, the methodincludes forming a hard mask on a portion of a strained silicon layer ofa strained silicon-on-insulator substrate. In accordance with thepresent application, the hard mask is located within an nFET deviceregion. A portion of the strained silicon layer within a pFET deviceregion is then recessed to expose a sub-surface of the strained siliconlayer in the pFET device region. Next, a first SiGe layer having a firstGe content is formed on the sub-surface of the strained silicon layer inthe pFET device region. A thermal condensation process is then performedto convert the strained silicon layer in the pFET device region into asecond SiGe layer having the first Ge content and being relaxed. Next, athird SiGe layer having a second Ge content that is greater than thefirst Ge content is formed on an exposed topmost surface of the secondSiGe layer. In accordance with the present application, the third SiGelayer is compressively strained. The hard mask is thereafter removedfrom atop the strained silicon layer in the nFET device region. Next,the strained silicon layer in the nFET device region is patterned toprovide a strained silicon fin, and a material stack of the third SiGelayer and the second SiGe layer in the pFET device region is alsopatterned to provide a SiGe fin structure.

In another aspect of the present application, a semiconductor structureis provided. In one embodiment of the present application, thesemiconductor structure includes a tensily strained silicon finextending upwards from a first portion of a substrate and in an nFETdevice region. The structure further includes a SiGe fin structureextending upwards from a second portion of the substrate and in a pFETdevice region. In accordance with the present application, the SiGe finstructure comprises, from bottom to top, a lower SiGe fin that isrelaxed and an upper SiGe fin, wherein the upper SiGe fin iscompressively strained and has a germanium content that is greater thana germanium content of the lower SiGe fin.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a cross sectional view of an exemplary semiconductor structureincluding, from bottom to top, a handle substrate, an insulator layerand a strained silicon layer that can be employed in one embodiment ofthe present application.

FIG. 2 is a cross sectional view of the exemplary semiconductorstructure of FIG. 1 after forming a hard mask on a portion of thestrained silicon layer atop an nFET device region, while leaving anotherportion of the strained silicon layer atop a pFET device region bare.

FIG. 3 is a cross sectional view of the exemplary semiconductorstructure of FIG. 2 after recessing the strained silicon layer in thepFET device region to expose a sub-surface of a remaining portion of thestrained silicon layer.

FIG. 4 is a cross sectional view of the exemplary semiconductorstructure of FIG. 3 after forming a dielectric spacer.

FIG. 5 is a cross sectional view of the exemplary semiconductorstructure of FIG. 4 after forming a first SiGe layer having a first Gecontent on the exposed sub-surface of the remaining portion of thestrained silicon layer within the pFET device region.

FIG. 6 is a cross sectional view of the exemplary semiconductorstructure of FIG. 5 after performing a thermal condensation whichconverts a remaining portion of the strained silicon layer in the pFETdevice region into a second SiGe layer having the first Ge content.

FIG. 7 is a cross sectional view of the exemplary semiconductorstructure of FIG. 6 after exposing a topmost surface of the second SiGelayer within the pFET device region.

FIG. 8 is a cross sectional view of the exemplary semiconductorstructure of FIG. 7 after forming a third SiGe layer having a second Gecontent that is greater than the first Ge content on the topmost surfaceof the second SiGe layer.

FIG. 9 is a cross sectional view of the exemplary semiconductorstructure of FIG. 8 after removing the hard mask, and forming strainedsilicon fins in the nFET device region, and forming SiGe fin structurescomprising, from bottom to top, a lower SiGe fin having the first Gecontent and an upper SiGe fin having the second Ge content and beingcompressively strained.

FIG. 10 is a cross sectional view of the exemplary semiconductorstructure of FIG. 9 after forming an nFET gate structure straddling overeach strained silicon fin, and a pFET gate structure straddling overeach SiGe fin structure.

DETAILED DESCRIPTION

The present application will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent application. It is noted that the drawings of the presentapplication are provided for illustrative purposes only and, as such,the drawings are not drawn to scale. It is also noted that like andcorresponding elements are referred to by like reference numerals.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide an understanding ofthe various embodiments of the present application. However, it will beappreciated by one of ordinary skill in the art that the variousembodiments of the present application may be practiced without thesespecific details. In other instances, well-known structures orprocessing steps have not been described in detail in order to avoidobscuring the present application.

It will be understood that when an element as a layer, region orsubstrate is referred to as being “on” or “over” another element, it canbe directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “beneath” or “under” another element, it can bedirectly beneath or under the other element, or intervening elements maybe present. In contrast, when an element is referred to as being“directly beneath” or “directly under” another element, there are nointervening elements present.

Referring first to FIG. 1, there is illustrated an exemplarysemiconductor structure including, from bottom to top, a handlesubstrate 10, an insulator layer 12 and a strained silicon layer 14 thatcan be employed in one embodiment of the present application.Collectively, the handle substrate 10, insulator layer 12 and strainedsilicon layer 14 may be referred to herein as a strainedsilicon-on-insulator (SSOI) substrate. The handle substrate 10 providesmechanical support to the insulator layer 12 and the strained siliconlayer 14.

In some embodiments of the present application, the handle substrate 10may comprise a semiconductor material. The term “semiconductor” as usedherein in connection with the semiconductor material of the handlesubstrate 10 denotes any semiconducting material including, for example,Si, Ge, SiGe, SiC, SiGeC, or III/V compound semiconductors such as, forexample, InAs, GaAs or InP. Multilayers of these semiconductor materialscan also be used as the semiconductor material of the handle substrate10. In one embodiment, the handle substrate 10 is composed of silicon.In some embodiments, the handle substrate 10 is a non-semiconductormaterial including, for example, a dielectric material and/or aconductive material. In some embodiments, the handle substrate 10 may beomitted.

The handle substrate 10 and the strained silicon layer 14 may have thesame or different crystal orientation. For example, the crystalorientation of the handle substrate 10 and/or the strained silicon layer14 may be {100}, {110}, or {111}. Other crystallographic orientationsbesides those specifically mentioned can also be used in the presentapplication. The handle substrate 10 of the SSOI substrate may be asingle crystalline semiconductor material, a polycrystalline material,or an amorphous material.

The insulator layer 12 of the SSOI substrate may be a crystalline ornon-crystalline oxide or nitride. In one embodiment, the insulator layer12 is an oxide such as, for example, silicon dioxide. In anotherembodiment, the insulator layer 12 is a nitride such as, for example,silicon nitride or boron nitride. In yet other embodiments, theinsulator layer 12 is a multilayered stack of, in any order, silicondioxide and boron nitride.

The strained silicon layer 14 of the SSOI substrate is composed ofsingle crystalline silicon. The strained silicon layer 14 of the presentapplication is tensily strained. In one embodiment, the strained siliconlayer 14 has a strain value of from 0.5% to 1.5%.

The SSOI substrate may be formed utilizing a layer transfer process. Insuch a process, an optional thinning step may follow the bonding of twosemiconductor wafers together. The optional thinning step reduces thethickness of the strained silicon layer 14 to a layer having a thicknessthat is more desirable.

In some embodiments, the thickness of strained silicon layer 14 of theSSOI substrate is from 10 nm to 100 nm. Other thicknesses that arelesser than, or greater than, the aforementioned thickness range mayalso be employed as the thickness of the strained silicon layer 14 inthe present application. The insulator layer 12 of the SSOI substratetypically has a thickness from 1 nm to 200 nm. Other thicknesses thatare lesser than, or greater than, the aforementioned thickness range mayalso be used as the thickness of the insulator layer 12. The thicknessof the handle substrate 10 of the SSOI substrate is inconsequential tothe present application.

Referring now to FIG. 2, there is illustrated the exemplarysemiconductor structure of FIG. 1 after forming a hard mask 16 on aportion of the strained silicon layer 14 atop an nFET device region 100,while leaving another portion of the strained silicon layer 14 atop apFET device region 102 bare. The nFET device region 100 is an area ofthe exemplary semiconductor structure in which at least one nFET devicewill be subsequently formed, while the pFET device region 102 is an areaof the exemplary semiconductor structure in which at least one pFETdevice will be subsequently formed.

The hard mask 16 can be formed by first forming a contiguous layer ofhard mask material (not shown) on a topmost surface of the strainedsilicon layer 14 of the SSOI substrate shown in FIG. 1. The hard maskmaterial may include a dielectric material such as, for example, silicondioxide and/or silicon nitride. In one embodiment, the contiguous layerof hard mask material that provides hard mask 16 can be formed utilizinga deposition process such as, for example, chemical vapor deposition orplasma enhanced chemical vapor deposition. In another embodiment of thepresent application, the contiguous layer of hard mask material thatprovides hard mask 16 can be formed utilizing a thermal process such as,for example, thermal oxidation or thermal nitridation. The contiguouslayer of hard mask material that provides hard mask 16 can have athickness from 5 nm to 50 nm. Other thicknesses that are lesser than, orgreater than, the aforementioned thickness range may also be employed asthe thickness of the contiguous layer of hard mask material thatprovides hard mask 16.

After forming the contiguous layer of hard mask material, the contiguouslayer of hard mask material is subjected to a patterning process. In oneembodiment of the present application, the contiguous layer of hard maskmaterial can be patterned by lithography and etching. Lithographyincludes forming a photoresist material (not shown) atop the contiguouslayer of hard mask material. The photoresist material may include apositive-tone photoresist composition, a negative-tone photoresistcomposition or a hybrid-tone photoresist composition. The photoresistmaterial may be formed by a deposition process such as, for example,spin-on coating. After forming the photoresist material, the depositedphotoresist material is subjected to a pattern of irradiation. Next, theexposed photoresist material is developed utilizing a conventionalresist developer. This provides a patterned photoresist atop a portionof the contiguous layer of hard mask material. The pattern provided bythe patterned photoresist material is thereafter transferred into theunderlying contiguous layer of hard mask material utilizing at least onepattern transfer etching process. Typically, the at least one patterntransfer etching process is an anisotropic etch. In one embodiment, adry etching process such as, for example, reactive ion etching can beused. In another embodiment, a chemical etchant can be used. In still afurther embodiment, a combination of dry etching and wet etching can beused.

Referring now to FIG. 3, there is illustrated the exemplarysemiconductor structure of FIG. 2 after recessing the strained siliconlayer 14 in the pFET device region 102 to expose a sub-surface SS of aremaining portion of the strained silicon layer 14. The remainingportion of strained silicon layer 14 within the pFET device region 102may be referred to herein as a strained silicon portion 14P.

As is shown, the strained silicon portion 14P within the pFET deviceregion 102 has a thickness that is less than the thickness of strainedsilicon layer 14 within the nFET device region 100. Thus, the exposedsub-surface SS of the strained silicon portion 14P within the pFETdevice region 102 is vertically offset and is located beneath a topmostsurface TS of the strained silicon layer 14 in the nFET device region100. In one example, the thickness of the strained silicon layer 14within the nFET device region 100 is 30 nm, while the thickness of thestrained silicon portion 14P in the pFET device region 102 is 5 nm.

The recessing of the strained silicon layer 14 in the pFET device region102 may be performed utilizing an anisotropic etching process such as,for example, reactive ion etching, that selectively removes silicon ascompared to a dielectric material that provides hard mask 16. In oneexample, reactive ion etching (RIE) may be used to recess that strainedsilicon layer 14 that is not protected by hard mask 16.

Referring now to FIG. 4, there is illustrated the exemplarysemiconductor structure of FIG. 3 after forming a dielectric spacer 18.In some embodiments, dielectric spacer 18 formation may be omitted. Whendielectric spacer 18 is formed, it is formed along an exposed sidewallsurface of the strained silicon layer 14 within the nFET device region100. A base of the dielectric spacer 18 is formed on a portion of theexposed sub-surface SS of strained silicon portion 14P in the pFETdevice region 102. In some embodiments and as shown, a topmost surfaceof the dielectric spacer 18 is positioned between a topmost surface ofthe hard mask 16 and a bottommost surface of the hard mask 16. As such,the dielectric spacer 18 may also be formed along a sidewall surface ofthe hard mask 16. In yet other embodiments, the dielectric spacer 18 mayhave a topmost surface that is coplanar with either a topmost surface ofthe hard mask 16, or the topmost surface TS of the strained siliconlayer 14 in the nFET device region 100.

The dielectric spacer 18 may comprise a same or different dielectricmaterial as the hard mask material that provides the hard mask 16. Inone embodiment, dielectric spacer 18 may comprise silicon dioxide,silicon nitride and/or silicon oxynitride. The dielectric spacer 18 maybe formed by deposition of a dielectric spacer material and thereaftersubjecting the deposited dielectric spacer material to a spacer etch.

Referring now to FIG. 5, there is illustrated the exemplarysemiconductor structure of FIG. 4 after forming a first SiGe layer 20having a first Ge content on the exposed sub-surface SS of the remainingportion of the strained silicon layer (i.e., strained silicon portion14P) within the pFET device region 102.

The first SiGe layer 20 may be formed by a selective epitaxial growth(or deposition) process; by “selective” it is meant that first SiGelayer 20 forms only on exposed surfaces of semiconductor material, i.e.,the exposed sub-surface SS of the strained silicon portion 14P, and noton dielectric surfaces, such as silicon dioxide or silicon nitridesurfaces. The terms “epitaxial growth and/or deposition” and“epitaxially formed and/or grown” mean the growth of a semiconductormaterial on a deposition surface of a semiconductor material, in whichthe semiconductor material being grown has the same crystallinecharacteristics as the semiconductor material of the deposition surface.In an epitaxial deposition process, the chemical reactants provided bythe source gases are controlled and the system parameters are set sothat the depositing atoms arrive at the deposition surface of thesemiconductor substrate with sufficient energy to move around on thesurface and orient themselves to the crystal arrangement of the atoms ofthe deposition surface. Therefore, an epitaxial semiconductor materialhas the same crystalline characteristics as the deposition surface onwhich it is formed. For example, an epitaxial semiconductor materialdeposited on a {100} crystal surface will take on a {100} orientation.Thus, the first SiGe layer 20 has an epitaxial relationship with thegrowth surface of the underlying strained silicon portion 14P.

Examples of various epitaxial growth process apparatuses that aresuitable for use in forming the first SiGe layer 20 of the presentapplication include, e.g., rapid thermal chemical vapor deposition(RTCVD), low-energy plasma deposition (LEPD), ultra-high vacuum chemicalvapor deposition (UHVCVD), atmospheric pressure chemical vapordeposition (APCVD) and molecular beam epitaxy (MBE). The temperature forepitaxial deposition ranges from 550° C. to 900° C. Although highertemperature typically results in faster deposition, the fasterdeposition may result in crystal defects and film cracking.

A number of different sources may be used for the deposition of thefirst SiGe layer 20. In some embodiments, the gas source for thedeposition of the first SiGe layer 20 may include an admixture of asilicon containing gas source and a germanium containing gas source.Examples of silicon gas sources include silane, disilane, trisilane,tetrasilane, hexachlorodisilane, tetrachlorosilane, dichlorosilane,trichlorosilane, methylsilane, dimethylsilane, ethylsilane,methyldisilane, dimethyldisilane, hexamethyldisilane and combinationsthereof. Examples of germanium gas sources include germane, digermane,halogermane, dichlorogermane, trichlorogermane, tetrachlorogermane andcombinations thereof. In some embodiments, the first SiGe layer 20 canbe formed from a source gas that includes a compound containing siliconand germanium. Carrier gases like hydrogen, nitrogen, helium and argoncan be used.

As mentioned above, the first SiGe layer 20 has a first Ge content. Inone embodiment of the present application, the first Ge content of thefirst SiGe layer 20 can be from 20 atomic percent germanium to 50 atomicpercent germanium. The first SiGe layer 20 that is formed has athickness that is substantially the same as the thickness of strainedsilicon portion 14P. By “substantially the same” it is meant that thethickness of the first SiGe layer 20 is within ±1 nm from the thicknessof the underlying strained silicon portion 14P.

Referring now to FIG. 6, there is illustrated the exemplarysemiconductor structure of FIG. 5 after performing a thermalcondensation which converts a remaining portion of the strained siliconlayer (i.e., strained silicon portion 14P) in the pFET device region 102into a second SiGe layer 24 having the first germanium content. Duringthe thermal condensation, the entirety of the first SiGe layer 20 isconsumed and a silicon oxide layer 22 forms on the second SiGe layer 24.Notably, during thermal condensation, Si atoms within the first SiGelayer 20 react with oxygen forming silicon oxide layer 22 and Ge atomsfrom the first SiGe layer 22 diffuse downwards into the strained siliconportion 14P converting the strained silicon portion 14P into the secondSiGe layer 24.

The thermal condensation can be performed in an oxidizing ambient suchas, for example, oxygen, air, ozone, water vapor, and/or NO₂. In someembodiments, the oxidizing ambient can be admixed with an inert gas suchas, for example, He, Ar and/or Ne. In such an embodiment, the inert gasconstitutes from 2 volume % to 95 volume % of an oxidizing ambientcontaining admixture. The thermal condensation can be performed at atemperature from 400° C. to 1300° C. The thermal condensation mayinclude a furnace anneal, a rapid thermal anneal or any other annealthat can provide the exemplary semiconductor structure shown in FIG. 6.

The second SiGe layer 24 that is formed is a relaxed SiGe layer; thestrained silicon layer 14 within the nFET device region 100 remainsstrained after the thermal condensation process. The second SiGe layer24 that is formed has substantially the same thickness as that of thestrained silicon portion 14P. The second SiGe layer 24 that is formedafter thermal condensation has a bottommost surface that is in directphysical contact with a portion of the insulator layer 12. The secondSiGe layer 24 that is formed after thermal condensation also has asidewall surface that directly contacts a portion of the strainedsilicon portion 14P that remains beneath the dielectric spacer 18.

Referring now to FIG. 7, there is illustrated the exemplarysemiconductor structure of FIG. 6 after exposing a topmost surface ofthe second SiGe layer 24 within the pFET device region 102. The exposingof the topmost surface of the second SiGe layer 24 includes removing thesilicon oxide layer 22 that is formed during thermal condensation. Theremoval of the silicon oxide layer 22 may comprise an etching processthat is selective in removing silicon oxide as compared with theunderlying second SiGe layer 24.

Referring now to FIG. 8, there is illustrated the exemplarysemiconductor structure of FIG. 7 after forming a third SiGe layer 26having a second Ge content that is greater than the first Ge content onthe topmost surface of the second SiGe layer 24. The third SiGe layer 26that is formed has a topmost surface that is coplanar with a topmostsurface of the strained silicon layer 14 that is within the nFET deviceregion 100. In the illustrated embodiment, the third SiGe layer 26 thatis formed has a sidewall surface that directly contacts a sidewallsurface of the dielectric spacer 18. Also, and in the illustratedembodiment, a bottommost surface of the third SiGe layer 26 is coplanarwith a bottommost surface of the dielectric spacer 18.

The third SiGe layer 26 may be formed utilizing an epitaxial growth (ordeposition) process as mentioned above in forming the first SiGe layer20. Thus, the third SiGe layer 26 that is formed has an epitaxialrelationship, i.e., same crystal orientation, as the growth surface ofthe second SiGe layer 24 that is formed by thermal condensation.

As mentioned above, the third SiGe layer 26 has a second Ge content thatis greater than the first Ge content. In one embodiment of the presentapplication, the second Ge content of the third SiGe layer 26 can befrom 30 atomic percent germanium to 70 atomic percent germanium. In oneembodiment, of the present application, the third SiGe layer 26 that isformed has a thickness from 20 nm to 50 nm. Other thicknesses arepossible for the third SiGe layer 26. The third SiGe layer 26 that isformed is thus compressively strained.

Referring now to FIG. 9, there is illustrated the exemplarysemiconductor structure of FIG. 8 after removing the hard mask 16, andforming strained silicon fins 14F in the nFET device region 100, andforming SiGe fin structures comprising, from bottom to top, a lower SiGefin 24F having the first Ge content and an upper SiGe fin 26F having thesecond Ge content and being compressively strained.

Although a plurality of strained silicon fins 14F and a plurality ofSiGe fin structures (24F, 26F) is described and illustrated, the presentapplication contemplates an embodiment in which a single strainedsilicon fin 14F and/or a single SiGe fin structure (24F, 26F) is/areformed.

Each strained silicon fin 14F within the nFET device region 100comprises a remaining portion of strained silicon layer 14. Thus, eachstrained silicon fin 14 is tensily strained and has a height that is thesame as the original thickness of the strained silicon layer 14. Eachstrained silicon fin 14F has a bottommost surface that is located on aportion of a topmost surface of insulator layer 12.

Each SiGe fin structure (24F, 26F) within the pFET device region 102comprises a remaining portion of second SiGe layer 24 and a remainingportion of the third SiGe layer 26. Namely, the lower SiGe fin 24Fcomprises a remaining portion of the second SiGe layer 24 and thus isrelaxed, while the upper SiGe fin 26F comprises a remaining portion ofthe third SiGe layer 26 and thus is compressively strained. Each SiGefin structure (24F, 26F) has a topmost surface that is coplanar with atopmost surface of each strained silicon fin 14F. Namely, the topmostsurface of each upper SiGe fin 26F is coplanar with a topmost surface ofeach strained silicon fin 14. As such, each strained silicon 14F andeach SiGe fin structure (24F, 26F) have a same height. As is shown, eachlower SiGe fin 24F has a thickness that is less than a thickness of acorresponding and overlying upper SiGe fin 26F.

As is shown, a bottommost surface of each lower SiGe fin 24F is indirect physical contact with a portion of the underlying insulator layer12. The bottommost surface of each upper SiGe fin 26F is located on atopmost surface of a corresponding and underlying lower SiGe fin 24F.Each upper SiGe fin 26F has sidewall surfaces that are verticallycoincident (i.e., not extending beyond or undercutting) sidewallsurfaces of a corresponding and underlying lower SiGe fin 24F.

The hard mask 16 can be removed utilizing any process that canselectively remove the hard mask material that provides hard mask 16. Insome embodiments, the dielectric spacer 22 may also be removed at thesame time as the removal of the hard mask 16. In yet another embodiment,the dielectric spacer 22 can be removed after hard mask 16 removal andprior to forming the strained silicon fins 14F and the SiGe finstructures (24F, 26F).

The strained silicon fins 14F and the SiGe fin structures (24F, 26F) canbe formed by patterning the strained silicon layer 14 within the nFETdevice region 100 and the material stack of, from bottom to top, thesecond SiGe layer 24 and the third SiGe layer 26 in the pFET deviceregion 102. The patterning of the strained silicon layer 14 may occurprior to, simultaneously with, or after the patterning of a materialstack comprising the third SiGe layer 26 and the second SiGe layer 24.

In one embodiment of the present application, lithography and etching asdefined above may be used to provide the strained silicon fins 14F andthe SiGe fin structures (24F, 26F).

In another embodiment of the present application, a sidewall imagetransfer (SIT) process may be used to provide the strained silicon fins14F and the SiGe fin structures (24F, 26F). The SIT process includesforming a contiguous mandrel material layer (not shown) atop thestrained stain layer 14 and the third SiGe layer 26. The contiguousmandrel material layer (not shown) can include any material(semiconductor, dielectric or conductive) that can be selectivelyremoved from the structure during a subsequently performed etchingprocess. In one embodiment, the contiguous mandrel material layer (notshown) may be composed of amorphous silicon or polysilicon. In anotherembodiment, the contiguous mandrel material layer (not shown) may becomposed of a metal such as, for example, Al, W, or Cu. The contiguousmandrel material layer (not shown) can be formed, for example, bychemical vapor deposition or plasma enhanced chemical vapor deposition.Following deposition of the contiguous mandrel material layer (notshown), the contiguous mandrel material layer (not shown) can bepatterned by lithography and etching to form a plurality of mandrelstructures (also not shown) on the topmost surface of the structure.

The SIT process continues by forming a dielectric spacer on eachsidewall of each mandrel structure. The dielectric spacer can be formedby deposition of a dielectric spacer material and then etching thedeposited dielectric spacer material. The dielectric spacer material maycomprise any dielectric spacer material such as, for example, silicondioxide, silicon nitride or a dielectric metal oxide. Examples ofdeposition processes that can be used in providing the dielectric spacermaterial include, for example, chemical vapor deposition (CVD), plasmaenhanced chemical vapor deposition (PECVD), or atomic layer deposition(ALD). Examples of etching that be used in providing the dielectricspacers include any etching process such as, for example, reactive ionetching.

After formation of the dielectric spacers, the SIT process continues byremoving each mandrel structure. Each mandrel structure can be removedby an etching process that is selective for removing the mandrelmaterial. Following the mandrel structure removal, the SIT processcontinues by transferring the pattern provided by the dielectric spacersinto the underlying semiconductor materials stopping atop the insulatorlayer 12. The pattern transfer may be achieved by utilizing at least oneetching process. Examples of etching processes that can used to transferthe pattern may include dry etching (i.e., reactive ion etching, plasmaetching, and ion beam etching or laser ablation) and/or a chemical wetetch process. In one example, the etch process used to transfer thepattern may include one or more reactive ion etching steps. Uponcompletion of the pattern transfer, the SIT process concludes byremoving the dielectric spacers from the structure. Each dielectricspacer may be removed by etching or a planarization process.

Each strained silicon fin 14F and each SiGe fin structure (24F, 26F)that are formed include a pair of vertical sidewalls that are parallelto each other. As used herein, a surface is “vertical” if there exists avertical plane from which the surface does not deviate by more thanthree times the root mean square roughness of the surface. Each strainedsilicon fin 14F and each SiGe fin structure (24F, 26F) have a width(i.e., the first width) from 12 nm to 40 nm and a length from 100 nm to2000 nm. Other widths and lengths are possible and can be used in thepresent application for the strained silicon fins 14F and SiGe finstructures (24F, 26F).

Referring now to FIG. 10, there is illustrated the exemplarysemiconductor structure of FIG. 9 after forming an nFET gate structurestraddling over each strained silicon fin 14F, and a pFET gate structurestraddling over each SiGe fin structure (24F, 26F). By “straddling” itis meant that at least one portion of the gate structure is located onone side of strained silicon fin 14F or SiGe fin structure (24F, 26F),while another portion of the same gate structure is located on anotherside of the strained silicon fin 14F or the SiGe fin structure (24F,26F). The two portions are interconnected by a portion of the gatestructure that is located directly atop of the strained silicon fin 14For the SiGe fin structure (24F, 26F). As shown in the illustratedembodiment, a portion of the gate structure contacts a topmost surfaceof insulator layer 12. Although a single gate structure is described andillustrated, a plurality of gate structures can be formed straddlingdifferent portions of the strained silicon fin 14F and/SiGe finstructure (24F, 26F).

In one embodiment (and as shown), each gate structure (i.e., nFET gatestructure and FET structure) is a functional gate structure. By“functional gate structure” it is meant a permanent gate structure usedto control output current (i.e., flow of carriers in the channel) of asemiconducting device through electrical or magnetic fields. Eachfunctional gate structure includes a gate material stack of, from bottomto top, a gate dielectric portion 28L, 28R and a gate conductor portion30L, 30R. In some embodiments, a gate cap portion (not shown) can bepresent atop each gate conductor portion 30L, 30R.

Each gate dielectric portion 28L, 28R of the functional gate structurecomprises a gate dielectric material. The gate dielectric material thatprovides each gate dielectric portion 28L, 28R can be an oxide, nitride,and/or oxynitride. In one example, the gate dielectric material thatprovides each gate dielectric portion 28L, 28R can be a high-k materialhaving a dielectric constant greater than silicon dioxide. Exemplaryhigh-k dielectrics include, but are not limited to, HfO₂, ZrO₂, La₂O₃,Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃, HfO_(x)N_(y), ZrO_(x)N_(y),La₂O_(x)N_(y), Al₂O_(x)N_(y), TiO_(x)N_(y), SrTiO_(x)N_(y),LaAlO_(x)N_(y), Y₂O_(x)N_(y), SiON, SiN_(x), a silicate thereof, and analloy thereof. Each value of x is independently from 0.5 to 3 and eachvalue of y is independently from 0 to 2. In some embodiments, amultilayered gate dielectric structure comprising different gatedielectric materials, e.g., silicon dioxide, and a high-k gatedielectric, can be formed and used as each gate dielectric portion 28L,28R. In some embodiments, gate dielectric portion 28L comprises a samegate dielectric material as gate dielectric portion 28R. In otherembodiments, gate dielectric portion 28L comprises a different gatedielectric material than gate dielectric portion 28R.

The gate dielectric material used in providing each gate dielectricportion 28L, 28R can be formed by any deposition process including, forexample, chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), physical vapor deposition (PVD), sputtering, oratomic layer deposition. In some embodiments and when different gatedielectric materials are used in providing the gate dielectric portions28L, 28R, block mask technology can be used. In one embodiment of thepresent application, the gate dielectric material used in providing eachgate dielectric portion 28L, 28R can have a thickness in a range from 1nm to 10 nm. Other thicknesses that are lesser than, or greater than,the aforementioned thickness range can also be employed for the gatedielectric material.

Each gate conductor portion 30L, 30R of the functional gate structurecomprises a gate conductor material. The gate conductor material used inproviding each gate conductor portion 30L, 30R can include anyconductive material including, for example, doped polysilicon, anelemental metal (e.g., tungsten, titanium, tantalum, aluminum, nickel,ruthenium, palladium and platinum), an alloy of at least two elementalmetals, an elemental metal nitride (e.g., tungsten nitride, aluminumnitride, and titanium nitride), an elemental metal silicide (e.g.,tungsten silicide, nickel silicide, and titanium silicide) ormultilayered combinations thereof. In some embodiments, the gateconductor portion 30L comprise a same conductive material as gateconductor portion 30R. In other embodiments, the gate conductor portion30L comprises a different gate conductor material than gate conductorportion 30R. For example, the gate conductor portion 30L may comprise annFET gate metal, while the gate conductor portion 30R may comprise apFET gate metal.

The gate conductor material used in providing each gate conductorportion 30L, 30R can be formed utilizing a deposition process including,for example, chemical vapor deposition (CVD), plasma enhanced chemicalvapor deposition (PECVD), physical vapor deposition (PVD), sputtering,atomic layer deposition (ALD) or other like deposition processes. When ametal silicide is formed, a conventional silicidation process isemployed. When a different gate conductor material is used for each gateconductor portion 30L, 30R, block mask technology can be used. In oneembodiment, the gate conductor material used in providing each gateconductor portion 30L, 30R has a thickness from 1 nm to 100 nm. Otherthicknesses that are lesser than, or greater than, the aforementionedthickness range can also be employed for the gate conductor materialused in providing each gate conductor portion 30L, 30R.

If present, the gate cap portion of the functional gate structurecomprises a gate cap material. The gate cap material that provides thegate cap portion may include one of the hard mask materials mentionedabove. In one embodiment, each gate cap portion comprises silicondioxide, silicon nitride, and/or silicon oxynitride. The material thatprovides the gate cap portion can be formed utilizing a conventionaldeposition process such as, for example, chemical vapor deposition orplasma enhanced chemical vapor deposition. The material that providesthe gate cap portion can has a thickness from 5 nm to 20 nm. Otherthicknesses that are lesser than, or greater than, the aforementionedthickness range can also be employed as the thickness of the materialthat provides the gate cap portion.

The functional gate structure can be formed by providing a functionalgate material stack of, from bottom to top, the gate dielectricmaterial, the gate conductor material and, if present, the gate capmaterial. The gate material stack can then be patterned. In oneembodiment of the present application, patterning of the functional gatematerial stack may be performed utilizing lithography and etching, asdefined above.

In other embodiments of the present application, and prior to formingfunctional gate structure, a sacrificial gate structure is formedinstead of a functional gate structure. In yet other embodiments andwhen multiple gate structures are formed, at least one of the gatestructures is a functional gate structure, and at least one other of thegate structures is a sacrificial gate structure. By “sacrificial gatestructure” it is meant a material or material stack that serves as aplaceholder for a subsequently formed functional gate structure. In sucha process, the functional gate structure is formed after thesource/drain regions have been formed. In such an embodiment, the gatedielectric portion of the functional gate structure that replaces thesacrificial gate structure may be U-shaped. By “U-shaped” it is meant amaterial that includes a bottom horizontal surface and a sidewallsurface that extends upward from the bottom horizontal surface. Whenemployed, each sacrificial gate structure may include a sacrificial gatedielectric portion, a sacrificial gate material portion and asacrificial gate cap portion. In some embodiments, each sacrificial gatedielectric portion and/or each sacrificial gate cap portion may beomitted. Each sacrificial gate dielectric portion includes one of thedielectric materials mentioned above for the gate dielectric portion.Each sacrificial gate material portion includes one of the gateconductor materials mentioned above for the gate conductor portion. Thesacrificial gate cap portion includes one of the gate cap materialsmentioned above for each gate cap portion. The sacrificial gatestructures can be formed by deposition of the various material layersand then patterning the resultant sacrificial dielectric material sackby utilizing, for example, lithography and etching.

After forming the gate structures (functional and/or sacrificial gatestructures), dielectric spacers (not shown) can be formed on exposedsidewall surfaces of the respective gate structure. The dielectricspacers may comprise one of the dielectric materials mentioned above fordielectric spacers used in the SIT process. The dielectric spacers canbe formed by depositing a spacer material and thereafter a spacer etchcan be performed. Next, a source region (not shown) is formed on oneside of each gate structure and a drain region (not shown) is formed onanother side of each gate structure. The source region and the drainregion would run into an out of the plane of the paper including theexemplary semiconductor structure shown in FIG. 10. The source/drainregions may including formation of a doped epitaxial semiconductormaterial on exposed portions of each strained silicon fin 14F andexposed portions of each SiGe fin structure (24F, 26F).

While the present application has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present application. It is therefore intended that the presentapplication not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. A semiconductor structure comprising: a tensilystrained silicon fin extending upwards from a first portion of asubstrate and in an nFET device region; and a SiGe fin structureextending upwards from a second portion of said substrate and in a pFETdevice region, wherein said SiGe fin structure comprises, from bottom totop, a lower SiGe fin that is relaxed and an upper SiGe fin, whereinsaid upper SiGe fin of said SiGe fin structure is compressively strainedand has a germanium content that is greater than a germanium content ofsaid lower SiGe fin of said SiGe fin structure.
 2. The semiconductorstructure of claim 1, wherein a topmost surface of said tensily strainedsilicon fin is coplanar with a topmost surface of said upper SiGe fin ofsaid SiGe fin structure.
 3. The semiconductor structure of claim 1,wherein a bottommost surface of said upper SiGe fin of said SiGe finstructure is in direct physical contact with a topmost surface of saidlower SiGe fin of said SiGe fin structure.
 4. The semiconductorstructure of claim 1, wherein said upper SiGe fin of said SiGe finstructure has a thickness that is greater than a thickness of said lowerSiGe fin of said SiGe fin structure.
 5. The semiconductor structure ofclaim 1, wherein said upper SiGe fin of said SiGe fin structure hassidewall surfaces that are vertically coincident with sidewall surfacesof said lower SiGe fin of said SiGe fin structure.
 6. The semiconductorstructure of claim 1, wherein said substrate is an insulator layer. 7.The semiconductor structure of claim 1, further comprising an nFET gatestructure straddling over said tensily strained silicon fin, and a pFETgate structure straddling over said SiGe fin structure.
 8. Thesemiconductor structure of claim 7, wherein said nFET gate structure andsaid pFET gate structure comprise a gate dielectric portion and a gateconductor portion.
 9. The semiconductor structure of claim 8, whereinsaid gate conductor portion of said nFET gate structure comprises annFET gate metal, and said gate conductor portion of said pFET gatestructure comprises a pFET gate metal.
 10. The semiconductor structureof claim 7, wherein said nFET gate structure and said pFET gatestructure are spaced apart from each other.
 11. The semiconductorstructure of claim 1, wherein a bottommost surface of said tensilystrained silicon fin is coplanar with a bottommost surface of said lowerSiGe fin of said SiGe fin structure.
 12. The semiconductor structure ofclaim 1, wherein said tensily strained silicon fin has a strain value offrom 0.5% to 1.5%.
 13. The semiconductor structure of claim 1, whereingermanium content of said upper SiGe fin of said SiGe fin structure isfrom 30 atomic percent germanium to 70 atomic percent germanium.
 14. Thesemiconductor structure of claim 1, wherein said tensily strainedsilicon fin and said SiGe fin structure have a same width and a samelength.
 15. The semiconductor structure of claim 14, wherein said widthis from 12 nm to 40 nm, and said length is from 100 nm to 2000 nm. 16.The semiconductor structure of claim 1, wherein said upper SiGe fin ofsaid SiGe fin structure has an epitaxial relationship with said lowerSiGe fin of said SiGe fin structure.
 17. The semiconductor structure ofclaim 1, wherein said nFET device region comprises a plurality of saidtensily strained silicon fins, and wherein said pFET device regioncomprises a plurality of said SiGe fin structures.